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29 November 2000 Properties of oriented (Ba,Sr)TiO3 thin films
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408351
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Ba0.7Sr0.3TiO3 thin film/Ba0.5Sr0.5TiO3 buffer layer/Pt/Ti/SiO2/Si(100) multilayer structures were investigated. The buffer layer was obtained from a highly dilute solution (0.1 M) by sol-gel technique through rapid thermal process. X-ray diffraction patterns show that the upper main BST film is preferential oriented and good in-plane relationship of BST(111)//Pt(111). After using the buffer layer, the leakage current was reduced two orders of magnitude. The dielectric properties are much better than those of the thin films without buffer layer at the same thickness of 150 nm.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wen Ding and Zhongyan Meng "Properties of oriented (Ba,Sr)TiO3 thin films", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408351
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