29 November 2000 Recent studies on ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408420
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Results of our recent experiments relating to the synchrotron-radiation (SR)-excited growth of ZnTe on the (100) ZnTe substrate using metalorganic sources are described. We have clarified the growth characteristics and quality of ZnTe films. The shape of deposited film suggests that surface excitation process, i.e., the excitation of the adsorbed species or sample surface, will be the dominant mechanism. The quantum yield for forming ZnTe molecules was estimated to be as high as 0.3% in the room temperature growth. ZnTe epitaxial film without carbon and oxygen contamination is attainable even at room temperature using SR as a light source. Near band gap luminescence can be observed even in the films grown at room temperature. It seems that a use of N2 carrier gas is promising for the inclusion of nitrogen as shallow acceptors and the suppression of defects. Through these experiments, we propose that the SR-excited growth is a powerful technique for a novel low temperature growth of compounds.
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Mitsuhiro Nishio, Kazuki Hayashida, Hiroki Harada, Yoshiaki Mitsuishi, Qixin Guo, Hiroshi Ogawa, "Recent studies on ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408420; https://doi.org/10.1117/12.408420
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