Paper
29 November 2000 Refractive index measurement for planar photonic crystal using a microscopy-spectrometry method
Mike Xu Ouyang, Emmanuel C. Onyiriuka, L. D. Kinney
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408415
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
We report a unique technique to measure the refractive index (n), extinction coefficient (k), and thickness of thin films based on either the reflection or transmission spectra. The method combines a spectrometer, an optical microscope and a video camera. It is inexpensive, versatile and fast (< a few sec). Using this technology, n&k of 1.68 and 0.376, respectively, at 1500 nm was measured on a planar photonic crystal. The photonic crystal with a dimension of 117 X 90 micrometers 2 mm has a periodic cermet structure on Si substrate made by Deutsch Telekom using the electron induced deposition.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mike Xu Ouyang, Emmanuel C. Onyiriuka, and L. D. Kinney "Refractive index measurement for planar photonic crystal using a microscopy-spectrometry method", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408415
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KEYWORDS
Refractive index

Photonic crystals

Optical microscopes

Reflection

Silicon

Thin films

Spectroscopy

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