29 November 2000 Research on the structure of Ag-TCNQ thin films for information storage
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408476
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The structure and the electrical bistable properties of vacuum deposited thin films of Ag-TCNQ (7,7,8,8- Tetracyanoquinodimethane) complex have been investigated. The characteristics of obtained films under different preparation conditions have been compared. The optical transmission spectra and the x-ray diffraction measurements were conducted to analyze the structure and the thermal stability of the films. The atomic force microscope was used to examine the morphology and grain size of the films. The corresponding electrical switching property was measured upon the Ag-TCNQ films with different combined sandwich- shaped electrodes. The results how that the films can have very stable switching properties. The switching time between high and low impedance states is about 10 ns, and the switching voltage is around 4.0 V. The film preparation parameters and different layered structure have an important influence on the characteristic of the films. The switching mechanism was discussed.
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Xinggong Wan, Xinggong Wan, Dianyong Chen, Dianyong Chen, Yiming Jiang, Yiming Jiang, Hua Zhang, Hua Zhang, Jin Li, Jin Li, Zhongyi Hua, Zhongyi Hua, } "Research on the structure of Ag-TCNQ thin films for information storage", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408476; https://doi.org/10.1117/12.408476
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