Paper
29 November 2000 Single-mode lasing of InGaAs/InGaAsP MQWs microdisk lasers with low threshold
Yuzhai Pan, Yongqiang Ning, Hui Suo, Yun Liu, Lijun Wang, Jiuling Lin, Dongjiang Wu, Shouchun Li
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408443
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The lasing modes and the spontaneous emission factors of microdisk lasers are analyzed simply, in this paper, InGaAs/InGaAsP multiple quantum wells (MQW) microdisk lasers are fabricated by using the methods of active ion etching and selective chemical etching. The diameter of the microdisk lasers was 3 micrometers . InGaAs/InGaAsP MQW microdisk lasers was optically pumped when cooled with liquid nitrogen. We obtained the single-mode lasing at 1.5 micrometers wavelength, with threshold pump power 18 (mu) w.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuzhai Pan, Yongqiang Ning, Hui Suo, Yun Liu, Lijun Wang, Jiuling Lin, Dongjiang Wu, and Shouchun Li "Single-mode lasing of InGaAs/InGaAsP MQWs microdisk lasers with low threshold", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408443
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KEYWORDS
Laser damage threshold

Optical microcavities

Etching

Wet etching

Nitrogen

Quantum wells

Semiconductor lasers

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