29 November 2000 Sol-gel-derived PLZT (7/60/40) thin films on ITO/glass and LNO/glass substrates
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408339
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The PLZT (7/60/40) thin films were prepared on ITO/Glass and LNO/Glass substrates by sol-gel process. The crack-free, uniform and dense films were obtained by post-annealing at the temperature between 450 degree(s)C and 600 degree(s)C. Pyrochlore phase was completely changed to perovskite phase above 570 degree(s)C with the increase of annealing temperature. The crystal buffer layer of ITO or LNO can promote the growth of perovskite. Films deposited on LNO/Glass substrates possesses good ferroelectric characteristics, Pr equals 18 (mu) C/cm2, Ec equals 55 kV/cm. The asymmetrical switching characteristics can be observed for the films deposited on LNO/Glass substrates, which is mainly due to the difference between top electrode Au and bottom electrode LNO.
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Ping Sun, Ping Sun, Tong Sun, Tong Sun, Chao-Nan Xu, Chao-Nan Xu, Tadahiko Watanabe, Tadahiko Watanabe, } "Sol-gel-derived PLZT (7/60/40) thin films on ITO/glass and LNO/glass substrates", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408339; https://doi.org/10.1117/12.408339
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