29 November 2000 Spectroellipsometric study of buried SiC layers formed by carbon implantation with a metal vapor vacuum arc ion source
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408323
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
SiC material is of intense interest because of its unique properties. Two samples were prepared by carbon ion implantation into silicon substrates with a metal vapor vacuum arc ion source at an energy of 65 keV and a dose of 1.0 X 1018 cm-2. Following implantation, one sample was annealed in nitrogen ambient at 1250 degree(s)C for 10 hours. Spectroscopic ellipsometry (SE) was performed on these two samples (as-implanted and annealed) over a spectral range of 400 - 2000 nm at a fixed incidence angle. In order to lessen the parameter correlation existing in the regression analysis, a multiple sample analysis method was employed. From the interpretation of SE spectra, structural and optical properties of the annealed and the as-implanted samples were derived. SE results confirmed the formation of a thick buried SiC layer for the annealed sample, but the optical properties of this buried layer were found to be different from those of bulk SiC material. For the as- implanted sample, the gradual carbon atom profile was simplified homogeneous composition layers with varying carbon concentrations. The carbon-rich region was treated as a single layer whose optical properties can be represented by one term of Lorentz oscillator, useful information could be obtained.
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Wensheng Guo, Dan Zhu, Zhihong Liu, "Spectroellipsometric study of buried SiC layers formed by carbon implantation with a metal vapor vacuum arc ion source", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408323; https://doi.org/10.1117/12.408323
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