Spontaneous and stimulated emission in ZnCdSe/ZnSe asymmetrical double quantum wells

Xiwu Fan; Guangyou Yu; Jiying Zhang; De Zen Shen

doi:10.1117/12.408288

29 November 2000 Spontaneous and stimulated emission in ZnCdSe/ZnSe asymmetrical double quantum wells

Xiwu Fan, Guangyou Yu, Jiying Zhang, De Zen Shen

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408288
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

The spontaneous and stimulated emission in ZnCdSe/ZnSe asymmetric double quantum wells have been studied. The exciton photoluminescence both in the narrow well and in the wide well is influenced by two factors, the exciton tunneling and the thermal dissociation processes. The change of the emission intensity is determined by the stronger one. The carrier tunneling through the thin barrier is conductive to the stimulated emission from the wide well, and the threshold can be lowered by optimizing the structure.

Citation Download Citation

Xiwu Fan, Guangyou Yu, Jiying Zhang, and De Zen Shen "Spontaneous and stimulated emission in ZnCdSe/ZnSe asymmetrical double quantum wells", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408288

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