29 November 2000 Sputtering deposition and optical properties of SiCxNy films
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408319
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
In this paper, the SiCxNy films were prepared by RF magnetron sputtering with SiC target. The influences of the basic process parameters on the deposition rate and optical properties were studied. The results revealed the formation of a complex network among Si, C and N. The deposition rate decreased with increasing partial pressure of nitrogen. The increase of N2 flux resulted in the wider optical gap. The greater the sputtering power, the higher the deposition rate and the narrower the optical band gap.
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Xingcheng Xiao, Lixin Song, Weihui Jiang, Xingfang Hu, "Sputtering deposition and optical properties of SiCxNy films", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408319; https://doi.org/10.1117/12.408319
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