29 November 2000 Strains in Si substrate induced by formation of Ge islands
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408406
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Grazing incidence x-ray diffraction measurements at different grazing angles for self-organized Ge dots grown on Si(001) are carried out by using synchrotron radiation as a light source. Deformation strains in the substrate underneath or surrounding the dots induced by formation of Ge quantum dots are investigated. Besides a tensile strain existing underneath the dots, a peak located at the higher angle side of Si(220) or Si(400) is observed for the first time, the origin of this peak is attributed to the near surface compressive strain in the peripheral substrate regions surrounding the Ge dots. This compressive strain corresponds to a -0.8% lattice constant change parallel to the interface.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weirong Jiang, Weirong Jiang, Zuimin Jiang, Zuimin Jiang, Bin Shi, Bin Shi, Hui Xiong, Hui Xiong, D. Z. Hu, D. Z. Hu, D. W. Gong, D. W. Gong, Y. L. Fan, Y. L. Fan, Xiaoming Jiang, Xiaoming Jiang, Q. J. Jia, Q. J. Jia, W. L. Zheng, W. L. Zheng, D. C. Qian, D. C. Qian, } "Strains in Si substrate induced by formation of Ge islands", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408406; https://doi.org/10.1117/12.408406
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