(Ta2O5)0.92(TiO2)0.08 thin films prepared by pulsed laser deposition

Yijian Jiang; Li Zhang; Deshu Zou; Tiechuan Zuo

doi:10.1117/12.408352

29 November 2000 (Ta₂O₅)_0.92(TiO₂)_0.08thin films prepared by pulsed laser deposition

Yijian Jiang, Li Zhang, Deshu Zou, Tiechuan Zuo

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408352
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

(formula available in paper)thin films have been deposited on Si substrate by 248 nm pulsed laser deposition in O₂ gas environment. The structure and properties of (formula available in paper)polycrystalline thin film were investigated as a function of the deposition temperature, oxygen pressure and the substrate-target distance. The film with the thickness of 190 nm showed a dielectric constant (epsilon) _r equals 56.

Citation Download Citation

Yijian Jiang, Li Zhang, Deshu Zou, and Tiechuan Zuo "(Ta₂O₅)_0.92(TiO₂)_0.08thin films prepared by pulsed laser deposition", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408352

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