15 December 2000 In-situ film thickness measurement for CVD by use of spectrometer
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Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406375
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada
Abstract
A new in situ measurement system of film thickness for thermal CVD based on thin film interference is presented. Comparing the radiation spectrum during deposition with that before deposition, we controlled the thickness of' the films with accuracy of 3nm on the thermal process where the temperature changes significantly. Using the interfi.rence of the substrate, we measured thickness of the film thinner than 2Onm.
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Tomomi Ino, Akira Soga, Yoshiaki Akama, Naoto Nishida, "In-situ film thickness measurement for CVD by use of spectrometer", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); doi: 10.1117/12.406375; https://doi.org/10.1117/12.406375
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