Paper
15 December 2000 Mode locking of a ring cavity semiconductor diode laser
Author Affiliations +
Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406320
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada
Abstract
We report new results on the generation and characterization of picosecond pulses from a self-mode-locked semiconductor diode laser. The active medium (InGaAs, 830-870 nm) is a semiconductor optical amplifier whose facets are cut at angle and AR coated. The amplifier is inserted in a three-minor ring cavity. Mode locking is purely passive; it takes place for specific alignment conditions. Trains of counterpropagating pulses are produced, with pulse duration varying from 1 .2 to 2 ps. The spectra of the counterpropagatmg pulses do not fully overlap; their central wavelengths differ by a few nm. The pulse repetition rate has been varied from 0.3 to 3 GHz. The pulses have been compressed to less than 500-fs duration with a grating pair. We discuss some of the potential physical mechanisms that could be involved in the dynamics of the mode-locked regime. Hysteresis in the LI curve has been observed. To characterize the pulses, we introduce the idea of a Pulse Quality Factor, where the pulse duration and spectral width are calculated from the second-order moments of the measured intensity autocorrelation and power spectral density.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Louis Desbiens, Ararat Yesayan, and Michel Piche "Mode locking of a ring cavity semiconductor diode laser", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406320
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KEYWORDS
Mode locking

Semiconductor lasers

Semiconductors

Picosecond phenomena

Optical amplifiers

Refraction

Amplifiers

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