15 December 2000 Steady-state stability of external-cavity semiconductor lasers operating at the strong-feedback regime
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Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406319
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada
Abstract
The steady-state stability of external-cavity semiconductor lasers (ECL) operating at the strong feedback regime is investigated. A simple analytical expression for the critical external power reflectivity, above which the ECL steadystate is stable, is presented and compared with other authors' results. The validity of this expression is discussed and compared with results obtained from accurate simulation of a set of improved differential nonlinear laser rate equations. It is shown that the steady-state bistability in the strong feedback regime can be first denounced by a kink in the L-I and frequency shift vs bias current characteristics which, after further reduction of the external feedback strength, is transformed into a hysteresis region.
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Adolfo V. T. Cartaxo, Adolfo V. T. Cartaxo, Jose A. P. Morgado, Jose A. P. Morgado, } "Steady-state stability of external-cavity semiconductor lasers operating at the strong-feedback regime", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); doi: 10.1117/12.406319; https://doi.org/10.1117/12.406319
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