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15 December 2000 Structural and compositional properties of epitaxial (GaAs)1-x(Ge2)x thin films grown by rf magnetron sputtering
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Proceedings Volume 4087, Applications of Photonic Technology 4; (2000)
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada
Epitaxial metastable (GaAs)1x(Ge2)x thin films have been grown on GaAs(100) in a rf planar magnetron sputtering system (MS), without As overpressure, throughout most of the full compositional x range. The structural and compositional properties are investigated by high resolution x-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS). The SIMS depth profiles demonstrate good homogeneity of Ge concentration for all the samples. HRXRD measurements show that the lattice constant has a nonlinear dependence on the concentration x and that a transition between zmc-blende and diamond crystal structures occurs at x 0.35. The existence of interfacial layers and the interference between the scattered amplitudes for the epilayer and substrate are considered negligible effects on the lattice parameter determination, and computer simulations confirm this assumption. We propose, from SIMS, HRXRD measurements and X-ray profiles simulations, that the lattice constant behavior is influenced by the resultant As/Ga ratio in the film.
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B. Salazar-Hernandez, M. E. Constantino, J. Escobedo-Alatorre, and A. Zamudio-Lara "Structural and compositional properties of epitaxial (GaAs)1-x(Ge2)x thin films grown by rf magnetron sputtering", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000);


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