6 November 2000 Etching characteristics of the PDP barrier rib pastes by focused Ar+ laser and Nd:YAG laser
Author Affiliations +
Proceedings Volume 4088, First International Symposium on Laser Precision Microfabrication; (2000) https://doi.org/10.1117/12.405744
Event: First International Symposium on Laser Precision Microfabrication (LPM2000), 2000, Omiya, Saitama, Japan
Abstract
The paste dried and hardened on glass substrate for fabrication of the PDP (Plasma Display Panel) barrier rib was selectively etched using focused Ar+ laser ((lambda) =532 nm), the threshold laser fluence was about 6.5 mJ/cm2 for the barrier rib samples softened at 120 degree(s)C. The thickness of 180 (mu) of the sample was completely removed without any damages on the glass substrate by laser fluence of 19.5 J/cm2. In order to increase the etch rate of the barrier rib materials, samples were heated on a hot plate during the laser irradiation. The etch rate at the hot plate temperature of 200 degree(s)C was roughly 4.2 times faster than that of room temperature.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
MinYoung Ahn, MinYoung Ahn, KyoungCheol Lee, KyoungCheol Lee, Hong Kyu Lee, Hong Kyu Lee, Cheon Lee, Cheon Lee, } "Etching characteristics of the PDP barrier rib pastes by focused Ar+ laser and Nd:YAG laser", Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); doi: 10.1117/12.405744; https://doi.org/10.1117/12.405744
PROCEEDINGS
4 PAGES


SHARE
RELATED CONTENT

Improved aluminum plug process for submicron via filling
Proceedings of SPIE (September 08 1994)
Microdroplet deposition by laser-induced forward transfer
Proceedings of SPIE (April 11 2005)
BiIn: a sensitive bimetallic thermal resist
Proceedings of SPIE (August 23 2001)
Laser direct etching for a PDP cell using Nd YAG...
Proceedings of SPIE (November 03 1999)
Laser machinable glass
Proceedings of SPIE (October 07 2004)
Attenuating phase-shifting mask at 157 nm
Proceedings of SPIE (July 29 2002)

Back to Top