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6 November 2000 Influence of laser fluence on the synthesis of carbon nitride thin films by nitrogen-ion-assisted pulsed-laser deposition
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Proceedings Volume 4088, First International Symposium on Laser Precision Microfabrication; (2000) https://doi.org/10.1117/12.405720
Event: First International Symposium on Laser Precision Microfabrication (LPM2000), 2000, Omiya, Saitama, Japan
Abstract
Carbon nitride films were deposited by pulsed Nd:YAG laser ablation of graphite with assistance of nitrogen ion beam bombardment. The nitrogen to carbon (N/C) atomic ratio, surface morphology and bonding state of the deposited carbon nitride films were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy and atomic force microscopy (AFM). The influence of laser fluence on the synthesis of carbon nitride films was investigated. The N/C atomic ratio of the carbon nitride films can reach the maximum at the highest laser fluence. XPS and FTIR analyses indicated that the bonding state between the carbon and nitrogen in the deposited films was influenced by the laser fluence during deposition. The carbon-nitrogen bonding of C-N, C=N together with very few CequalsVN were found in the films. Results indicated that the laser fluence also had critical effect on the surface morphologies of the carbon nitride films.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jian Ping Zhao, Z. Y. Chen, T. Yano, Toshihiko Ooie, Masafumi Yoneda, and J. Sakakibara "Influence of laser fluence on the synthesis of carbon nitride thin films by nitrogen-ion-assisted pulsed-laser deposition", Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); https://doi.org/10.1117/12.405720
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