6 November 2000 Pulsed laser nitridation of InP
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Proceedings Volume 4088, First International Symposium on Laser Precision Microfabrication; (2000) https://doi.org/10.1117/12.405737
Event: First International Symposium on Laser Precision Microfabrication (LPM2000), 2000, Omiya, Saitama, Japan
Abstract
Nitridation of semiconductor surfaces is attractive for passivation as well as fabrication of new materials. Nitridation of the III-V semiconductors has been mainly reported for GaAs. In this paper, we demonstrate the surface nitridation of InP by KrF excimer laser irradiation in an NH3 ambient. The laser fluence was fixed at 80 mJ/cm2 and number of pulses was changed from 500 to 10,000. S-ray photoelectron spectroscopy (XPS) analysis of the nitrided samples reveals that the InP surface contains both InNx and PNy compounds. Nitrogen content increases with the increase of number of pulses. Near- stoichiometric InN and P3N5 are formed by the 2500- pulse irradiation. Aging test reveals that the nitrided samples show anti-oxidation property, which is improved as the number of pulses increases.
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Naoko Aoki, Naoko Aoki, Toshimitsu Akane, Toshimitsu Akane, Koji Sugioka, Koji Sugioka, Koichi Toyoda, Koichi Toyoda, Jan J. Dubowski, Jan J. Dubowski, Katsumi Midorikawa, Katsumi Midorikawa, } "Pulsed laser nitridation of InP", Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); doi: 10.1117/12.405737; https://doi.org/10.1117/12.405737
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