30 November 1983 Calculation of Misfit Dislocations and Dangling Bond Densities in Abrupt Hg1-xCdxTe Heterojunctions
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Proceedings Volume 0409, Technical Issues in Infrared Detectors and Arrays; (1983) https://doi.org/10.1117/12.935733
Event: 1983 Technical Symposium East, 1983, Arlington, United States
Abstract
Based on the classical theory of epitaxial crystal growth, the misfit dislocations and dangling bond densities of abrupt (111) Hg l- xCdxTe heterojunctions have been calculated. It is assumed that the misfit between layers with compositions xi and x2 is accommodated by edge dislocations lying along the <111> directions. This is in agreement with recent experiments on the growth of Hgl-xCdxTe epitaxial layers. For the case where (x2 -x1) >0.1 the dangling bond density is on the order of 1011cm-2. Such large dangling bond densities may produce high interface recombination velocities or band-bending at the interface.
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Richard B. Schoolar, Richard B. Schoolar, } "Calculation of Misfit Dislocations and Dangling Bond Densities in Abrupt Hg1-xCdxTe Heterojunctions", Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); doi: 10.1117/12.935733; https://doi.org/10.1117/12.935733
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