Isothermal Growth Of Hgi_xCdxTe Films

R. Monchamp; C. Devaney; J. Miles

doi:10.1117/12.935729

30 November 1983 Isothermal Growth Of Hg_1-xCd_xTe Films

R. Monchamp, C. Devaney, J. Miles

Proceedings Volume 0409, Technical Issues in Infrared Detectors and Arrays; (1983) https://doi.org/10.1117/12.935729
Event: 1983 Technical Symposium East, 1983, Arlington, United States

Abstract

Single-crystal films up to 1 inch diameter of mercury cadmium telluride have been grown on mica substrates using a combination of two techniques. Initially, a film of CdTe was deposited on the substrate in a Hot Wall Epitaxial furnace. In a subsequent step the CdTe film is converted to HgCdTe by an evaporation and diffusion of HgTe at constant tempera-ture. The films were very uniform and had device quality electrical properties. Attempts to produce similar films on 2-inch diameter sapphire substrates resulted in polycrystalline growth.

Citation Download Citation

R. Monchamp, C. Devaney, and J. Miles "Isothermal Growth Of Hg_1-xCd_xTe Films", Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); https://doi.org/10.1117/12.935729

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