18 September 2000 Effect of partial crystallization on formation of amorphous marks
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Proceedings Volume 4090, Optical Data Storage 2000; (2000) https://doi.org/10.1117/12.399350
Event: Optical Data Storage, 2000, Whistler, BC, Canada
Abstract
The reflectivity of an amorphous mark on a first-surface phase-change optical storage disk is shown to vary with the level of crystallization of the GST layer. A static tester with 680-nm laser diode for writing amorphous marks and a 643-nm laser diode for monitoring the reflectivity changes is used for the experiment. An 8% difference in reflectivity is measured between the amorphous marks formed in the fully crystallized, high reflectivity (R equals 43%) state and partially crystallized, low reflectivity (R equals 30%) state.
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Kenric P. Nelson, Orlando Lopez, Michael F. Ruane, "Effect of partial crystallization on formation of amorphous marks", Proc. SPIE 4090, Optical Data Storage 2000, (18 September 2000); doi: 10.1117/12.399350; https://doi.org/10.1117/12.399350
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