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19 October 2000 In-situ annealing during the growth of relaxed SiGe
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In this paper, a graded Si1-xGex buffer and thereafter the Si0.8Ge0.2 uniform layer were grown at a little lower temperature to keep the surface smooth, which will provide the gliding dislocations a wider channel and less low energy nucleation sites on the surface. Therefore, the dislocation density may be reduced. However, the motion of the existing threading dislocations cannot retain equilibrium at lower temperature, strain will accumulate and be in favor of the nucleation of dislocation. In situ annealing was used to reduce the residual strain in the sample during the low-temperature growth of SiGe. A fully relaxed Si0.8Ge0.2 layer was obtained with the surface dislocation dnesity of 3x105cm-2.
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Daizong Li, Changjun Huang, Buwen Cheng, Hongjie Wang, Zhuo Yu, Chunhui Zhang, Jinzhong Yu, and Qiming Wang "In-situ annealing during the growth of relaxed SiGe", Proc. SPIE 4094, Optical and Infrared Thin Films, (19 October 2000);

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