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29 September 2000 Fabrication by wet etching of multilayer GaAIAs/GaAs microtips for SNOM applications
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Abstract
We propose to fabricate GaAlAs/GaAs multi-layer microtips for scanning near-field optical microscope using the anisotropic etching. The etching was performed in a solution of H3PO4:H2O2:H2O, operating at the temperature of 10 degree(s)C. We obtained the pyramid-shaped microtips with four etched facets and with a radius of curvature at the apex lower than 50 nm.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christophe Gorecki, Sabry Khalfallah, Hideki Kawakatsu, and Yasuhiko Arakawa "Fabrication by wet etching of multilayer GaAIAs/GaAs microtips for SNOM applications", Proc. SPIE 4098, Optical Devices and Diagnostics in Materials Science, (29 September 2000); https://doi.org/10.1117/12.401622
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