29 September 2000 Micro-Raman scattering and microphotoluminescence on GaN materials grown on sapphire by metalorganic vapor deposition
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Abstract
GaN thin film materials, un-doped, Si- and Mg-doped, have been grown on c-sapphire substrates by low pressure metalorganic chemical vapor deposition, and have been characterized by micro-Raman scattering ((mu) -RS) and micro- photoluminescence ((mu) -PL) spectroscopy. Basic Raman scattering modes, and in particular, their variations have been observed with the laser incident on the cross section of a few micron thick GaN film. Raman line shape analysis on the E2 mode is presented, based upon the spatial correlation theoretical model. Through the theoretical modeling of the LO-phonon-plasmon coupling, the free carrier concentration can be determined via Raman measurements and curve fitting. Using a newly designed and developed UV Raman-PL microscope system, room temperature PL and its variation with the SiH4 doping level for a series of n- type GaN epitaxial materials have been studied. Combined UV (mu) -RS-PL spectra from p-type GaN are also investigated.
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Zhe Chuan Feng, W. Wang, Wei Liu, Soo-Jin Chua, Geraint A. Evans, Martin Kuball, Ken P. J. Williams, G. D. Pitt, "Micro-Raman scattering and microphotoluminescence on GaN materials grown on sapphire by metalorganic vapor deposition", Proc. SPIE 4098, Optical Devices and Diagnostics in Materials Science, (29 September 2000); doi: 10.1117/12.401629; https://doi.org/10.1117/12.401629
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KEYWORDS
Gallium nitride

Raman spectroscopy

Raman scattering

Ultraviolet radiation

Metalorganic chemical vapor deposition

Phonons

Sapphire

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