Microstructural study of silicon carbide fibers through the use of Raman microscopy

Yanling Ward; Robert J. Young; Robert A. Shatwell

doi:10.1117/12.401630

29 September 2000 Microstructural study of silicon carbide fibers through the use of Raman microscopy

Yanling Ward, Robert J. Young, Robert A. Shatwell

Proceedings Volume 4098, Optical Devices and Diagnostics in Materials Science; (2000) https://doi.org/10.1117/12.401630
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

The microstructures of three different silicon carbide (SiC) fibers produced by CVD (chemical vapor deposition) have been examined in detail using Raman microscopy. Raman spectra were mapped out across the entire cross-sections of these silicon carbide fibers using an automated x-y stage with a spatial resolution of 1 micrometers . The Raman maps clearly illustrate the variations in microstructure in such types of silicon carbide fibers. It appears that the SCS-type fibers contain carbon as well as SiC whereas the Sigma 1140+ fiber also contains free silicon. Furthermore, the differences in the detailed structures of the carbon and silicon carbide present in the fibers can also be investigated. Raman microscopy is demonstrated to be a very sensitive technique for characterizing the composition and microstructure of CVD silicon carbide fibers prepared using different processing conditions.

Citation Download Citation

Yanling Ward, Robert J. Young, and Robert A. Shatwell "Microstructural study of silicon carbide fibers through the use of Raman microscopy", Proc. SPIE 4098, Optical Devices and Diagnostics in Materials Science, (29 September 2000); https://doi.org/10.1117/12.401630

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