25 October 2000 Comparative study of the UV-optical and structural properties of SiO2, Al2O3, and HfO2 single layers deposited by reactive evaporation, ion-assisted deposition, and plasma-ion-assisted deposition
Author Affiliations +
Abstract
In order to improve the degradation stability of dielectric mirrors for the use in UV-Free Electron Laser optical cavities a comparative study of the properties of SiO2, Al2O3, and HfO2 single layers was performed which was addressed to grow very dense films with minimum absorption in the spectral range from 200 nm to 300 nm. The films have been deposited by low loss reactive electron beam evaporation, by ion assisted deposition using a Mark II ion source, and by plasma ion assisted deposition using the APS source. Optical and structural properties of the samples have been studied by spectral photometry, infrared spectroscopy, x-ray diffraction and - reflectometry, as well as by investigation of the surface morphology. The interaction of UV radiation with photon energies close to the band gap was studied. For HfO2 single layer, LIDT at 248 nm were determined in the 1-on-1 and the 1000-to-1 test mode in dependence on the deposition technology and the film thickness.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roland Thielsch, Roland Thielsch, Alexandre Gatto, Alexandre Gatto, Joerg Heber, Joerg Heber, Sven Martin, Sven Martin, Norbert Kaiser, Norbert Kaiser, } "Comparative study of the UV-optical and structural properties of SiO2, Al2O3, and HfO2 single layers deposited by reactive evaporation, ion-assisted deposition, and plasma-ion-assisted deposition", Proc. SPIE 4102, Inorganic Optical Materials II, (25 October 2000); doi: 10.1117/12.405294; https://doi.org/10.1117/12.405294
PROCEEDINGS
13 PAGES


SHARE
Back to Top