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25 October 2000 Toward resistant UV mirrors at 200 nm for free electron lasers: manufacture, characterizations, and degradation tests
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Abstract
Storage Ring Free Electron Laser are attractive and full of promise tunable and powerful laser sources for the UV range. Concerning the optical cavity, the relatively small gain obtained in the UV calls for the necessity to use high reflectivity multilayer mirrors with reliable longevity in synchrotron environment. It is also crucial to limit their absorption in order to optimize the extracted power required for most of the applications. Indeed, the front mirror of the laser cavity receives not only the first harmonic where the lasers operates but all the synchrotron radiation emitted by the undulator: a wide spectrum extending towards X rays. These short wavelengths are responsible for the mirror degradation which results from changes in the coating materials (high induced absorption, color centers, heating...) as well as from carbon contamination due to cracked hydrocarbons originating from the residual vacuum atmosphere. Deposition technologies which allow the manufacture of very dense oxide coatings with low absorption and high reflectivity in UV spectral region were optimized and characterized for this purpose. We report here degradation studies performed on UV mirrors for Storage Ring Free Electron Lasers down to wavelengths as short as 200 nm.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandre Gatto, Roland Thielsch, Norbert Kaiser, M. Hirsch, David Garzella, Daniele Nutarelli, G. de Ninno, Eric Renault, Marie-Emmanuelle Couprie, Philippe Torchio, Marco Alvisi, Gerard Albrand, Claude Amra, Marino Marsi, Mauro Trovo, R. Walker, M. Grewe, Stephanie Robert, Jean Paul Roger, and Albert Claude Boccara "Toward resistant UV mirrors at 200 nm for free electron lasers: manufacture, characterizations, and degradation tests", Proc. SPIE 4102, Inorganic Optical Materials II, (25 October 2000); doi: 10.1117/12.405293; https://doi.org/10.1117/12.405293
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