Characterization of Si-on-insulator buried layers by FTIR and scatterometry

Victor A. Yakovlev; Sylvie Bosch-Charpenay; Peter A. Rosenthal; Peter R. Solomon; Jiazhan Xu; John C. Stover; Maria J. Anc; Michael L. Alles

doi:10.1117/12.403575

11 October 2000 Characterization of Si-on-insulator buried layers by FTIR and scatterometry

Victor A. Yakovlev, Sylvie Bosch-Charpenay, Peter A. Rosenthal, Peter R. Solomon, Jiazhan Xu, John C. Stover, Maria J. Anc, Michael L. Alles

Author Affiliations +

Proceedings Volume 4103, Optical Diagnostic Methods for Inorganic Materials II; (2000) https://doi.org/10.1117/12.403575
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

Non-destructive uniformity and defect control is an essential requirement for yield performance improvement and cost reduction of Silicon-on-Insulator (SOI) materials. To maximize performance and minimize production costs, it is critical to maintain a tight control over the oxygen implant dose. This has proven to be particularly true for the most advanced low dose SIMOX processes. Advanced FTIR reflectance spectroscopy and scatterometry have been used to characterize the buried layers of SOI materials and to relate unambiguously the process dose variations and corresponding changes of IR reflectance spectra.

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Victor A. Yakovlev, Sylvie Bosch-Charpenay, Peter A. Rosenthal, Peter R. Solomon, Jiazhan Xu, John C. Stover, Maria J. Anc, and Michael L. Alles "Characterization of Si-on-insulator buried layers by FTIR and scatterometry", Proc. SPIE 4103, Optical Diagnostic Methods for Inorganic Materials II, (11 October 2000); https://doi.org/10.1117/12.403575

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