2 February 2001 Effect of doping of Li-complex on charge injection and transport in tris(8-quinolato) aluminum layer
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Abstract
Thin buffer layers composed of tris(8-quinolato) aluminum (Alq) layer doped with Li-acetylacetonate (Li-acac), Mg-acac and magnesium metal were inserted between an MgAg cathode and an Alq electron transport layer in standard double-layer devices with the ITO/TPD/Alq/MgAg structure. The insertion of the buffer layers with Li-acac brought about large decrease in drive voltage. While the effects of Mg-acac and magnesium metal were smaller than the case of Li-acac. Electron drift mobility of Alq layers doped with Li-acac and magnesium metal was evaluated by using a time-of-flight method. Large increases of electron mobility as well as the increase of dark conductivity with doping were found.
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Tetsuo Tsutsui, Takeshi Yasuda, Hisao Ikeda, Dechun Zou, "Effect of doping of Li-complex on charge injection and transport in tris(8-quinolato) aluminum layer", Proc. SPIE 4105, Organic Light-Emitting Materials and Devices IV, (2 February 2001); doi: 10.1117/12.416889; https://doi.org/10.1117/12.416889
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