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2 February 2001 Hybrid silicon-organic light-emitting diodes for 1.5-μm optoelectronics
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Electroluminescent diodes fabricated on silicon substrates which emit at a wavelength of 1.5 micrometer have been demonstrated. The diodes operate at room temperature and exhibit good I-V characteristics. The diodes use an erbium tris(8-hydroxyquinoline) (ErQ) layer as electron transporting and emitting layer and use N, N'-diphenyl-N, N'-bis(3-methyl)-1,1'-biphenyl-4,4'-diamine (TPD) as the hole transporting layer. Hole injection into the diodes is from a p++ silicon substrate anode and aluminum is used as the cathode electrode. The devices demonstrated start to exhibit electroluminescence at a voltage of approximately 17 V and the electroluminescence intensity rises sub-linearly with the current density through the device. At a drive voltage of 33 V the diodes have an internal efficiency of approximately 0.01%. We have measured the luminescence lifetime for the 1.5 micrometer emission and obtained a value of approximately 200 microsecond(s) . Using this value and estimating the total concentration of erbium present in the diodes we calculate a theoretical maximum optical power generation in these diodes of approximately 100 mW.
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Richard J. Curry, William P. Gillin, M. Somerton, Andrew P. Knights, and Russell M. Gwilliam "Hybrid silicon-organic light-emitting diodes for 1.5-μm optoelectronics", Proc. SPIE 4105, Organic Light-Emitting Materials and Devices IV, (2 February 2001);

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