2 February 2001 Structure and characterization of a white up-emitting OLED on silicon for microdisplays
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Abstract
We have developed highly efficient, top-emitting white OLED structures suitable for black-and-white or full color microdisplay applications. White light emission was obtained from both singly doped and doubly doped emitter layer structures. However, the double-dopant structure, employing fluorescent blue and red-emitting dyes, generated much higher luminous efficiency than that of the single dopant structure incorporating only the red dopant. For top- emitting, white OLED devices with the double-dopant structure, we have achieved luminous efficiencies of 974 cd/m2, 4.9 cd/A, 1.9 lm/W and an external quantum efficiency of 1.8% when driven at 20 mA/cm2 and 7.9 V. The device has an electroluminescence turn-on voltage of 2.2 V. After turn-on, the current varies as the 14th power of the voltage. The projected operational half-life of these devices is greater than 6000 hrs. This estimate is based on devices that have been continuously driven at a constant current of 20 mA/cm2 for more than 3000 hrs. Based on an up-emitting, double-dopant white OLED structure, we have developed an SXGA-resolution, black-and-white active matrix OLED (AMOLED) on silicon microdisplay. This AMOLED-on-Si has demonstrated real-time video with 256 gray levels and consumes less than 400 mW of power at a brightness of 200 cd/m2.
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Tom Feng, Tariq A. Ali, E. S. Ramakrishnan, Richard A. Campos, Webster E. Howard, "Structure and characterization of a white up-emitting OLED on silicon for microdisplays", Proc. SPIE 4105, Organic Light-Emitting Materials and Devices IV, (2 February 2001); doi: 10.1117/12.416907; https://doi.org/10.1117/12.416907
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