5 February 2001 Photovoltaic response in poly(3-octylthiophene)-based metal-semiconductor-metal diodes
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Abstract
We report here on properties of Metal-Semiconductor-Metal cells based on poly(3-octylthiophene), P3OT. The diodes were fabricated by spin-coating of poly (3-octylthiophene) on an indium-tin oxide coated glass substrate and an aluminum top contact was evaporated onto the film. The optical and electrical characteristics of the diodes were studied. A power efficiency of 10-4 was obtained at AM 1.5 conditions, while the power efficiency reached its maximum of 6% under illumination at 256 nm at an intensity of 2 (mu) W/cm2.
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Emmanouil Kymakis, Emmanouil Kymakis, Gehan A. J. Amaratunga, Gehan A. J. Amaratunga, Ioannis Alexandrou, Ioannis Alexandrou, Manish Chhowalla, Manish Chhowalla, William I. Milne, William I. Milne, } "Photovoltaic response in poly(3-octylthiophene)-based metal-semiconductor-metal diodes", Proc. SPIE 4108, Organic Photovoltaics, (5 February 2001); doi: 10.1117/12.416939; https://doi.org/10.1117/12.416939
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