5 February 2001 Photovoltaic response in poly(3-octylthiophene)-based metal-semiconductor-metal diodes
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We report here on properties of Metal-Semiconductor-Metal cells based on poly(3-octylthiophene), P3OT. The diodes were fabricated by spin-coating of poly (3-octylthiophene) on an indium-tin oxide coated glass substrate and an aluminum top contact was evaporated onto the film. The optical and electrical characteristics of the diodes were studied. A power efficiency of 10-4 was obtained at AM 1.5 conditions, while the power efficiency reached its maximum of 6% under illumination at 256 nm at an intensity of 2 (mu) W/cm2.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emmanouil Kymakis, Emmanouil Kymakis, Gehan A. J. Amaratunga, Gehan A. J. Amaratunga, Ioannis Alexandrou, Ioannis Alexandrou, Manish Chhowalla, Manish Chhowalla, William I. Milne, William I. Milne, } "Photovoltaic response in poly(3-octylthiophene)-based metal-semiconductor-metal diodes", Proc. SPIE 4108, Organic Photovoltaics, (5 February 2001); doi: 10.1117/12.416939; https://doi.org/10.1117/12.416939

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