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17 November 2000 Photoreceiver array with near-field resolution capability
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Abstract
It has been suggested that ultrahigh density optical storage systems could be realized by storing data in patterns with spatial coordinates below the far-field resolution limit. While the ability to write data on these fine dimensions has been shown, the ability to read data with sub-lambda resolution has proven problematic. This is especially true for memory systems that require page oriented memory access. We present a novel near-field detector array technology that is expected to satisfy the requirement of these next generation optical memory systems. Based on CMOS photoreceiver arrays and a silicon based aperture array, our device's technology is implemented using standard fabrication processes to yield a planar, near-field photoreceiver array technology. While the photoreceiver technology is an important component of our device technology, the aperture array is the fundamental component designed to enable data detection with near-field resolution. Using micro-machining technology pioneered for Micro Electro-Mechanical Systems (MEMS), fabrication of our aperture arrays depends on KOH etching of the <100> Si planes. Focused Ion Beam milling is used to realize the apertures in a thin gold film deposited on a silicon dioxide layer. We present a detailed description of both the photoreceiver circuit and the aperture array fabrication method. Independent characterization of both the photoreceiver circuit and the aperture array is also included.
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Bharath Seshadri, Jianjing Tang, Irving Chyr, Andrew J. Steckl, and Fred Richard Beyette Jr. "Photoreceiver array with near-field resolution capability", Proc. SPIE 4109, Critical Technologies for the Future of Computing, (17 November 2000); https://doi.org/10.1117/12.409235
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