New graded band gap channel MOSFET for low-noise and gigahertz applications

Ali Abou-Elnour; Hamdi Abdelhamed; Adel El-Henawy; Ossama A. Abo-Elnor

doi:10.1117/12.422166

18 December 2000 New graded band gap channel MOSFET for low-noise and gigahertz applications

Ali Abou-Elnour, Hamdi Abdelhamed, Adel El-Henawy, Ossama A. Abo-Elnor

Proceedings Volume 4111, Terahertz and Gigahertz Electronics and Photonics II; (2000) https://doi.org/10.1117/12.422166
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

A new graded band gap channel MOSFET is suggested to make use of the improved electrical properties of SiGe over Si at high frequencies of operation. The device performance is analyze by using an analytical model and the obtained results are compared with those of conventional Si and non- uniform doped channel MOSFETs. Finally, the noise behavior of the new MOSFET is investigated to show its superior performance over conventional Si MOSFETs at GHZ frequencies of operation.

Citation Download Citation

Ali Abou-Elnour, Hamdi Abdelhamed, Adel El-Henawy, and Ossama A. Abo-Elnor "New graded band gap channel MOSFET for low-noise and gigahertz applications", Proc. SPIE 4111, Terahertz and Gigahertz Electronics and Photonics II, (18 December 2000); https://doi.org/10.1117/12.422166

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