18 December 2000 Sb-heterostructure zero-bias diodes for direct detection beyond 100 GHz
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Abstract
We have developed a new kind of millimeter wave diode for zero-bias detection up to and beyond 100GHz. The diode is based on the InAs/GaSb/AlSb heterostructure, which has a staggered Type II band gap alignment in which the conduction band of the InAs is lower in energy than the GaSb valence band edge. This produces a built-in asymmetry which produces a high zero bias nonlinearity in the current-voltage characteristic. The heterostructure is a relatively simple one that is reliably and reproducibly grown using standard molecular beam epitaxy techniques. The diodes we have fabricated demonstrate that this is a new and superior solution as compared with its predecessors, the Ge backward diode and the planar doped barrier diode, for detection and mixing of small input power-level signals without the added complexity of DC bias or local oscillator.
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Joel N. Schulman, David H. Chow, Edward T. Croke, Carl W. Pobanz, Howard L. Dunlap, C. D. Haeussler, "Sb-heterostructure zero-bias diodes for direct detection beyond 100 GHz", Proc. SPIE 4111, Terahertz and Gigahertz Electronics and Photonics II, (18 December 2000); doi: 10.1117/12.422149; https://doi.org/10.1117/12.422149
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KEYWORDS
Diodes

Germanium

Indium arsenide

Doping

Resistance

Capacitance

Electrons

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