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18 December 2000 SiGe/Si quantum well resonant-cavity-enhanced photodetector
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Abstract
Resonant-cavity-enhanced photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report a novel SiGe/Si multiple quantum-well resonance-cavity-enhanced photodetector fabricated on a separation-by-implanted-oxygen wafer operating near 1300nm. The buried oxide layer in SIMOX is used as a bottom mirror to form a vertical cavity with silicon dioxide/silicon Bragg reflector deposited on the top surface. The quantum efficiency at the wavelength of 1300nm is measured with 3.5 percent at a reverse bias of 15V, which is enhanced by 10 folds compared with a conventional photodetector with the same absorption structures.
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Cheng Li, Qingqing Yang, Hongjie Wang, Jialian Zhu, Liping Luo, Jinzhong Yu, and Qiming Wang "SiGe/Si quantum well resonant-cavity-enhanced photodetector", Proc. SPIE 4111, Terahertz and Gigahertz Electronics and Photonics II, (18 December 2000); https://doi.org/10.1117/12.422129
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