15 December 2000 Compositional instability and elemental redistribution in Hg1-xCdxTe induced by low-energy ion bombardment
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Abstract
Monte Carlo simulations are used to study the compositional changes in the near surface layer of HG-xCdxTe crystal substrate induced by F+ and Ar+ ion bombardment in the energy range of 0.1 to 5keV. The effects of the crystal structure of the substrate and the total dose used in the bombardment are involved in the simulations. Due to the preferential sputtering for different elements in the substrate and the difference of the displacement energies for these elements, remarkable redistribution of the constituent elements in the material are observed. The possibility of forming p-n junction by using the Hg enrichment layer near the surface as a diffusion source is discussed.
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Huadong Zhang, Huadong Zhang, Yueyuan Xia, Yueyuan Xia, Jiaxiong Fang, Jiaxiong Fang, } "Compositional instability and elemental redistribution in Hg1-xCdxTe induced by low-energy ion bombardment", Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); doi: 10.1117/12.409830; https://doi.org/10.1117/12.409830
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