15 December 2000 Compositional instability and elemental redistribution in Hg1-xCdxTe induced by low-energy ion bombardment
Author Affiliations +
Monte Carlo simulations are used to study the compositional changes in the near surface layer of HG-xCdxTe crystal substrate induced by F+ and Ar+ ion bombardment in the energy range of 0.1 to 5keV. The effects of the crystal structure of the substrate and the total dose used in the bombardment are involved in the simulations. Due to the preferential sputtering for different elements in the substrate and the difference of the displacement energies for these elements, remarkable redistribution of the constituent elements in the material are observed. The possibility of forming p-n junction by using the Hg enrichment layer near the surface as a diffusion source is discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huadong Zhang, Huadong Zhang, Yueyuan Xia, Yueyuan Xia, Jiaxiong Fang, Jiaxiong Fang, } "Compositional instability and elemental redistribution in Hg1-xCdxTe induced by low-energy ion bombardment", Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); doi: 10.1117/12.409830; https://doi.org/10.1117/12.409830


Excitonic luminescence of Hg1-x-yCdxMnyTe crystals
Proceedings of SPIE (August 29 1993)
AES investigation of anodic film on HCT crystal
Proceedings of SPIE (October 25 1994)
p to n ion beam milling conversion in specially doped...
Proceedings of SPIE (August 25 1997)
Regularities of the CdxHg1 xTe p n junction formation by...
Proceedings of SPIE (September 29 2005)
Electrical characteristics relaxation of ion milled MCT layers
Proceedings of SPIE (September 12 2005)

Back to Top