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15 December 2000 Computer modeling of dual-band HgCdTe photovoltaic detectors
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The most sophisticated infrared detector technology is based on multicolor devices. Both two-color HgCdTe photodiodes as well as quantum well GaAs/AlGaAs photodetectors have been presented. More attention is devoted to HgCdTe detectors based upon an n-P-N (the capital letters mean the materials with larger bandgap energy) HgCdTe triple layer heterojunction design. Both sequential mode and simultaneous mode detectors are fabricated. Because of the complicated and expensive fabrication process, numerical simulation has become a critical tool for the development of HgCdTe bandgap engineering devices. In the paper the performance of middle wavelength/long wavelength (MW/LW) dual-band HgCdTe photovoltaic detectors are examined theoretically. It is assumed that the performance of photodiodes is due to thermal generation governed by the Auger mechanism. An original iteration scheme was used to solve the system of nonlinear continuity equations and the Poisson equation. The effect of composition and doping profiles on the complex heterojunction detector parameters are presented. All quantities are presented as function of electric potential and Fermi quasi-levels. The results of calculations are presented as the maps showing spatial distribution of electrical potential, photoelectrical gain, sensitivity, and density of noise generation. The theoretical predictions of heterojunction device parameters are compared with available experimental data.
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Krzysztof Jozwikowski and Antoni Rogalski "Computer modeling of dual-band HgCdTe photovoltaic detectors", Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000);

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