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15 December 2000 Quantum well infrared photodetector (λ=3-20 μm) focal plane arrays: monolithic integration with Si-based readout-integrated circuitry for low cost and high performance
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Abstract
Results of detector characterization are presented for quantum well infrared photodetectors (QWIPs) fabricated from a variety of III-V material systems lattice-matched to InP substrate. Extremely large responsivities of 33.2 A/W were obtained from GaInAs/InP QWIPs operating at (lambda) equals 9 micrometers which represents to the authors' knowledge the largest value of responsivity for any QWIP in this wavelength range. Devices made from AlGaInAs/InP and GaInAs/AlInAs have also been realized that extend the wavelength range of sensitivity from 3 micrometers out to 20 micrometers while remaining lattice-matched to InP. Lattice-matched multispectral detectors are demonstrated for sensitivity at both 4 micrometers and 8.5 micrometers . Localized epitaxy of GaInAs/InP superlattice structures lattice-matched to InP was performed on Si substrate for the purpose of monolithic integration of III-V QWIPs with Si-based readout integrated circuitry.
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Manijeh Razeghi, Matthew Erdtmann, Christopher Louis Jelen, Jacqueline E. Diaz, F. Guastavinos, Gail J. Brown, and Yoon-Soo Park "Quantum well infrared photodetector (λ=3-20 μm) focal plane arrays: monolithic integration with Si-based readout-integrated circuitry for low cost and high performance", Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); https://doi.org/10.1117/12.409875
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