Translator Disclaimer
16 November 2000 Spatial distributions of hole traps and image latency in InSb focal plane arrays
Author Affiliations +
Abstract
Spatial distributions of hole trap sites on a quasipixel level in InSb arrays for SIRTF are examined. The dependence of flux, fluence, and applied bias on image latency is investigated, and experimental results are presented and discussed. Models of linearity and capacitance are compared with experimental results. We find increasing the depletion width in a light exposed pixel by larger reverse biasing decreases the trapped charge (or latency) in that pixel by factors of approximately 3. Assumed pixel geometries lead to an apparent spatial density of active trap sites that falls quickly with distance from the implants.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert G. Benson, William J. Forrest, Judith L. Pipher, William J. Glaccum, and Steven Lawrence Solomon "Spatial distributions of hole traps and image latency in InSb focal plane arrays", Proc. SPIE 4131, Infrared Spaceborne Remote Sensing VIII, (16 November 2000); https://doi.org/10.1117/12.406541
PROCEEDINGS
14 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Integrating 128 Element InSb Array: Recent Results
Proceedings of SPIE (November 22 1982)
Readout Mechanisms For Infrared Focal Plane Arrays
Proceedings of SPIE (December 08 1983)
Large-format MWIR focal plane arrays
Proceedings of SPIE (January 22 2003)

Back to Top