26 October 2000 Degradation of carrier lifetime in irradiated lasers
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The effect of radiation damage on carrier lifetime in 1310 nm InGaAsP/InP multi-quantum-well lasers irradiated with 0.8 MeV neutrons, was investigated for fluences up to 6.9 X 1014 n/cm2. The damage to the carrier lifetime was studied by measuring the transient response of irradiated lasers to incident optical pulses of 1064 nm and 532 nm wavelength, and by relative intensity noise measurements. The carrier lifetime was determined to be degraded to a similar extent in both the InGaAsP laser cavity and the surrounding InP material following radiation damage.
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Eric Pailharey, Jacques Baggio, Karl A. Gill, Francois Vasey, "Degradation of carrier lifetime in irradiated lasers", Proc. SPIE 4134, Photonics for Space Environments VII, (26 October 2000); doi: 10.1117/12.405347; https://doi.org/10.1117/12.405347

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