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26 October 2000 Organolanthanide-based infrared-light-emitting devices
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We have demonstrated that it is possible to product organic light emitting diodes containing lanthanide ions which provide sharp electroluminescence emission at a range of wavelengths in the near infrared including 0.9 micrometers , 0.98 micrometers , 1.064 micrometers , 1.3 micrometers and 1.5 micrometers . For devices grown on ITO substrates we have demonstrated bright electroluminescence at drive voltages of approximately 12 V. We have shown that these diodes can be integrated onto silicon substrates and use the silicon as the anode of the device. For erbium based devices which emit at a wavelength of 1.5 micrometers we have demonstrated devices with room temperature internal efficiencies of approximately 0.01% at a drive voltage of 33 V.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William P. Gillin and Richard J. Curry "Organolanthanide-based infrared-light-emitting devices", Proc. SPIE 4134, Photonics for Space Environments VII, (26 October 2000);

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