Radiation hardness and lifetime of VCSELs and PIN photodiodes for use in the ATLAS SCT

Gilles Mahout; David G. Charlton; John D. Dowell; Ingrid-Maria Gregor; Roger J. Homer; Predrag Jovanovic; Andreas Kootz; R. B. Nickerson; Roy Wastie; A. R. Weidberg

doi:10.1117/12.405345

26 October 2000 Radiation hardness and lifetime of VCSELs and PIN photodiodes for use in the ATLAS SCT

Gilles Mahout, David G. Charlton, John D. Dowell, Ingrid-Maria Gregor, Roger J. Homer, Predrag Jovanovic, Andreas Kootz, R. B. Nickerson, Roy Wastie, A. R. Weidberg

Author Affiliations +

Proceedings Volume 4134, Photonics for Space Environments VII; (2000) https://doi.org/10.1117/12.405345
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

This paper reports the radiation hardness of optical components to be used in the binary readout of one of the next generation of detectors in high energy physics. The optical components will have to sustain a total ionizing dose of 500 kGy and a 1 MeV equivalent neutron fluence of 10¹⁵ n cm^-2. Emitters of VCSEL type have been chosen and have shown a shift of 1 mA in the laser threshold current after irradiation, but are still suitable for our purpose. The epitaxial Si PIN photodiode receivers have an acceptable 30% drop in responsivity providing a higher reverse bias is applied. Speed and lifetime of both components appear to be unaffected by the radiation damage. Temperature characteristics showing differences from un- irradiated materials will be also presented.

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Gilles Mahout, David G. Charlton, John D. Dowell, Ingrid-Maria Gregor, Roger J. Homer, Predrag Jovanovic, Andreas Kootz, R. B. Nickerson, Roy Wastie, and A. R. Weidberg "Radiation hardness and lifetime of VCSELs and PIN photodiodes for use in the ATLAS SCT", Proc. SPIE 4134, Photonics for Space Environments VII, (26 October 2000); https://doi.org/10.1117/12.405345

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