26 October 2000 Radiation-induced dark signal in 0.5-μm CMOS APS image sensors
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Abstract
A CMOS APS image sensor test chip, which was designed employing the physical design techniques of enclosed geometry and guard rings and fabricated in a 0.5-micrometers CMOS process, underwent a Co60 (gamma) -ray irradiation experiment. The experiment demonstrated that implementing the physical design techniques of enclosed geometry and guard rings in CMOS APS image sensors is possible. It verified that employing these design techniques does not represent a fundamental impediment for the functionality and performance of CMOS APS image sensors. It further proved that CMOS APS image sensors that employ these physical design techniques yield better dark signal performance in ionizing radiation environment than their counterpart that do not employ those physical design techniques. For one of the different pixel designs that were included in the test chip pixel array, the pre- radiation average dark signal was approximately 1.92 mV/s. At the highest total ionizing radiation dose level used in the experiment (approximately 88 Krad(Si)), average dark signal increased to approximately 36.35 mV/s. After annealing for 168 hours at 100 degree(s)C, it dropped to approximately 3.87 mV/s.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sayed I. Eid, Richard HungKai Tsai, Eric R. Fossum, Robert Spagnuolo, John J. Deily, Hal Anthony, "Radiation-induced dark signal in 0.5-μm CMOS APS image sensors", Proc. SPIE 4134, Photonics for Space Environments VII, (26 October 2000); doi: 10.1117/12.405334; https://doi.org/10.1117/12.405334
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