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18 December 2000 FUV reflectometer for in-situ characterization of thin films deposited under UHV
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A far UV (FUV) reflectometer was developed at the Metal Optics Laboratory (Instituto de Fisica Aplicada, CIC, Madrid) for in situ reflectance as well as transmittance measurements of ultra high vacuum (UHV) deposited thin films. The spectral region covered by the reflectometer is 50 - 200 nm. The angle of incidence can be continuously changed from 3 degrees to 87 degrees. The sample holder is provided with two perpendicular rotation axes to perform reflectance measurements in two perpendicular planes of incidence. Thin films of the materials to be investigated can be deposited by evaporation in an adjacent chamber that is connected to the reflectometer through a gate valve and a long linear/rotary feedthrough. In this way, thin films are deposited and their reflectance is measured in UHV conditions without breaking vacuum. Two different deposition systems, including an electron gun and resistive evaporation sources, can be used for multilayer deposition. The instrument is furnished with a substrate heating system for deposition on a heated substrate, and/or for post-deposition sample annealing. A gas entrance system allows exposing the sample to controlled doses of different gases to analyze their effect over the sample reflectance. An atomic oxygen source is also installed in the reflectometer for aging simulations of in orbit operating optical instruments. The instrument is particularly useful to investigate the effect on the sample FUV reflectance of exposure to controlled atmospheres and other in situ treatments.
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Juan I. Larruquert, Jose Antonio Aznarez, and Jose Antonio Mendez "FUV reflectometer for in-situ characterization of thin films deposited under UHV", Proc. SPIE 4139, Instrumentation for UV/EUV Astronomy and Solar Missions, (18 December 2000);

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