Ultrastable and uniform EUV and UV detectors

Shouleh Nikzad; Todd J. Jones; S. T. Elliott; Thomas J. Cunningham; Peter W. Deelman; Arthur B. C. Walker II; Hakeem M. Oluseyi

doi:10.1117/12.410541

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18 December 2000 Ultrastable and uniform EUV and UV detectors

Shouleh Nikzad, Todd J. Jones, S. T. Elliott, Thomas J. Cunningham, Peter W. Deelman, Arthur B. C. Walker II, Hakeem M. Oluseyi

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Proceedings Volume 4139, Instrumentation for UV/EUV Astronomy and Solar Missions; (2000) https://doi.org/10.1117/12.410541
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

The large imaging format, high sensitivity, compact size, and ease of operation of silicon-based sensors have led instrument designers to choose them for most visible-light imagers and spectrometers for space-based applications. This will probably remain the case in the near future. In fact, technologies presently under development will tend to strengthen the position of the silicon-based sensors. CCD-CMOS hybrids currently being developed may combine the advantages of both imagers and new high-gain amplifiers and could permit photon- counting sensitivity even in large-format imagers. Back- illumination potentially enables silicon detectors to be used for photometry and imaging applications for which front- illuminated devices are poorly suited. Successful detection by back illumination requires treatment of the back surface using techniques such as delta doping. Delta-doped CCDs were developed at the Microdevices Laboratory at the Jet Propulsion Laboratory in 1992. Using molecular beam epitaxy, fully- processed thinned CCDs are modified for UV enhancement by growing 2.5 nm of boron-doped silicon on the back surface. Named delta-doped CCDs because of the sharply-spiked dopant profile in the thin epitaxial layer, these devices exhibit stable and uniform 100% internal quantum efficiency without hysteresis in the visible and ultraviolet regions of the spectrum. In this paper we will discuss the performance of delta-doped CCDs in UV and EUV, applicability to electron- bombarded CCD (EBCCD), our in-house thinning capability, and bonding approaches for producing flat focal plane arrays. Recent activities on the extension of delta-doping to other imaging technologies will also be presented.

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Shouleh Nikzad, Todd J. Jones, S. T. Elliott, Thomas J. Cunningham, Peter W. Deelman, Arthur B. C. Walker II, and Hakeem M. Oluseyi "Ultrastable and uniform EUV and UV detectors", Proc. SPIE 4139, Instrumentation for UV/EUV Astronomy and Solar Missions, (18 December 2000); https://doi.org/10.1117/12.410541

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