21 November 2000 Characterization of silicon carbide detectors and dosimeters
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Abstract
A preliminary study of the response of SiC devices to 22 MeV electrons, 6 MV photon beams from a linear accelerator and to (alpha) -particles from a 241Am source is presented in this work in view to assess the feasibility of SiC-based detectors and dosimeters. The devices used are 4H-SiC epitaxial n-type layer deposited onto a 4H-SiC n+type substrate wafer doped with nitrogen. Schottky contacts have been formed by deposition of a 1000 angstrom gold film on the epitaxial layer. Ti/Pt/Au ohmic contacts have been deposited on the rear side of the detector. The released charge has been observed to increase linearly with the electron dose up to 10 Gy. A linear dependence of the current response of the devices has been also observed as a function of the photon dose-rate in the 2-7 Gy/min range. A preliminary study of the photoconductive response to UV irradiation of semi-insulating 6H-SiC substrates is also reported on samples, with a bulk resistivity of approximately equals 1011 (Omega) cm, produced with a modified Lely technique.
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Mara Bruzzi, C. Lanzieri, Filipo Nava, S. Russo, Silvio Sciortino, Paolo Vanni, "Characterization of silicon carbide detectors and dosimeters", Proc. SPIE 4141, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II, (21 November 2000); doi: 10.1117/12.407603; https://doi.org/10.1117/12.407603
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