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21 November 2000 Thermal treatments of CdTe and CdZnTe detectors
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Abstract
An irreversible deterioration of CdTe and CdZnTe detectors after heat treatments in the temperature range of 150 - 200 degrees Celsius was reported by several authors; however, the nature of the processes responsible for the detector degradation and increased dark currents is not fully understood. In this study we have prepared CdTe and CdZnTe detectors equipped with Au contacts. The detectors were tested before and after thermal annealing under vacuum. Using combined measurements of current voltage characteristics, low temperature photoluminescence and nuclear spectroscopic measurements, we have attempted to differentiate between the various possible contributions to the detector degradation and elucidate the defect formation process involved.
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Kaushik Chattopadhyay, X. Ma, Jean-Olivier Ndap, Arnold Burger, Tuviah E. Schlesinger, Corin Michael R. Greaves, Howard L. Glass, J. P. Flint, and Ralph B. James "Thermal treatments of CdTe and CdZnTe detectors", Proc. SPIE 4141, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II, (21 November 2000); https://doi.org/10.1117/12.407595
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