21 November 2000 X-ray measurements with compound semiconductor arrays
Author Affiliations +
Abstract
We present preliminary results of X-ray measurements on two small format compound semiconductor arrays. The devices, a 5 X 5 gallium arsenide array and a 3 X 3 cadmium zinc telluride array, were produced specifically to address the material, electronic and technological problems that need to be solved in order to develop mega-pixel, Fano limited spectroscopic arrays. The GaAs device was fabricated on 40 micrometer epitaxial material and has a pixel size of 200 X 200 microns2 with pitch 250 micrometer. The CdZnTe array was fabricated on a 5 X 5 X 1.6 mm 3 single crystal of spectroscopic quality. The pixel sizes were 350 X 350 microns2 with a pixel pitch of 250 micrometer. Measurements from 5.9 keV to 100 keV were carried out both in our laboratory and at the HASYLAB synchrotron research facility in Hamburg, Germany. The typical FWHM energy resolutions recorded at 5.9 keV by the GaAs and CdZnTe arrays were 394 eV and 900 eV, respectively.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alan Owens, Hans Andersson, Marcos Bavdaz, G. Brammertz, Thomas Gagliardi, Vladimir Gostilo, I. Lisjutin, A. Loupilov, I. Major, Y. Mastrikov, Seppo Arvo Anter Nenonen, Anthony J. Peacock, Abel Poelaert, Heikki Sipila, L. Troeger, "X-ray measurements with compound semiconductor arrays", Proc. SPIE 4141, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II, (21 November 2000); doi: 10.1117/12.407604; https://doi.org/10.1117/12.407604
PROCEEDINGS
12 PAGES


SHARE
Back to Top