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5 January 2001 90-deg Bragg reflection from a thin crystalline film
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Abstract
Experimental observations of synchrotron radiation diffraction from a thin surface layer at a 90-degree Bragg reflection are reported and discussed. The synchrotron experiments were performed using a bending magnet source at the European Synchrotron Radiation Facility (ESRF) in France and undulator sources at the Advanced Photon Source (APS) in the U.S. and SPring-8 in Japan. Thin (0.5, 1.0 and 1.5 micron) InGaAs films deposited on a GaAs (100) substrate were studied near the 90- degree using the GaAs (800) reflection. A slight, less than 0.1%, difference in the lattice spacing between the layer and the substrate is sufficient to allow a direct and exclusive observation of the diffraction profile from a thin layer as if it was a 'free-standing' thin crystal. This research opens new possibilities for x-ray optical schemes and the development of novel analytical techniques for surface/interface x-ray diffraction studies.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrei Yurievich Nikulin, John R. Davis, Brian F. Usher, Andreas K. Freund, and Tetsuya Ishikawa "90-deg Bragg reflection from a thin crystalline film", Proc. SPIE 4145, Advances in X-Ray Optics, (5 January 2001); https://doi.org/10.1117/12.411629
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